Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices. - Yutao Cai; Yang Wang; Ye Liang; Yuanlei Zhang; Wen Liu 010; Huiqing Wen; Ivona Z. Mitrovic; Cezhou Zhao (IEEE Access, 2020)

Threshold Voltage Instability in D-mode AlGaN/GaN MIS-HEMTs with Al2O3 Gate Dielectric. - Ye Liang; Yuanlei Zhang; Yutao Cai; Zhaoyi Wang; Yinchao Zhao; Huiqing Wen; Wen Liu 010 (ICICDT, 2021)

Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al2O3/ZrOx/Al2O3 charge trapping layer. - Jiachen Duan; Yuanlei Zhang; Ye Liang; Yutao Cai; Wen Liu 010 (ICICDT, 2022)