A novel buried-oxide IGBT for improved VON-ESW trade-off. - Zhimin Li; Quanyuan Feng; Yuchi Qin (Microelectron. J., 2026)

A floating dummy IGBT with a polysilicon P-N junction gate for EMI suppression. - Yuchi Qin; Quanyuan Feng; Zhimin Li (Microelectron. J., 2026)