Analysis of failure mechanisms in erased state of sub 20-nm NAND Flash memory. - Kyunghwan Lee; Duckseoung Kang; Hyungcheol Shin; Sangjin Kwon; Shinhyung Kim; Yuchul Hwang (ESSDERC, 2014)

Machine Learning Based V-ramp VBD Predictive Model Using OCD-measured Fab Parameters for Early Detection of MOL Reliability Risk. - SungMan Rhee; Hyunjin Kim; Sangku Park; Taiki Uemura; Yuchul Hwang; Seungjin Choo; Jinju Kim; Hwasung Rhee; Shin-Young Chung (IRPS, 2023)

Impact of Design and Process on Alpha-Induced SER in 4 nm Bulk-FinFET SRAM. - Taiki Uemura; Byungjin Chung; Shin-Young Chung; Seungbae Lee; Yuchul Hwang; Sangwoo Pae (IRPS, 2023)

V-Ramp VBD Prediction Method Using OCD-Spectrum and Deep-Learning, and Application to Early Detection of V-NAND Low Metal Reliability Risk. - SungMan Rhee; Sung-Pyo Park; Sangku Park; Yuchul Hwang; Sangwoo Pae; Jun Meng; Yoonju Park (IRPS, 2024)

Soft-Error Sensitivity in SRAM Manufactured by Bulk Gate-All-Around (GAA) Technology. - Taiki Uemura; Byungjin Chung; Jaehee Choi; Seungbae Lee; Shin-Young Chung; Yuchul Hwang; Sangwoo Pae (IRPS, 2024)

Comprehensive Study of SER in FDSOI-Planar: 28 nm to 18 nm Scaling Effect and Temperature Dependence. - Taiki Uemura; Byungjin Chung; Jaehee Choi; Seungbae Lee; Shin-Young Chung; Yuchul Hwang; Sangwoo Pae (IRPS, 2024)

Reliability Characterization Using Accelerated Methods of 1Tb 9th-Gen VNAND for TLC/QLC applications. - Gang-Jun Kim; Taehun You; Sewon Jeon; Seung Hwan Kwak; Hwangju Song; Shinhyung Kim; Nam-Jae Kim; Jaeyeop Ahn; Hyuk Park 006; Seonhaeng Lee; Nam-Hyun Lee; Young Hoon Cho; et al. (IRPS, 2025)