Relation between Reliability and Yield of IC's Based on Discrete Defect Distribution Model. - Tianxu Zhao; Yue Hao 001; Peijun Ma; Taifeng Chen (DFT, 2001)

Reliability Estimation Model of ICs Interconnect Based on Uniform Distribution of Defects on a Chip. - Tianxu Zhao; Xuchao Duan; Yue Hao 001; Peijun Ma (DFT, 2003)

Short Critical Area Computational Method Using Mathematical Morphology. - Junping Wang; Yue Hao 001 (CIS (2), 2005)

Efficient parametric yield optimization of VLSI circuit by uniform design sampling method. - Ming-e Jing; Yue Hao 001; Jinfeng Zhang; Peijun Ma (Microelectron. Reliab., 2005)

The mobility of two-dimensional electron gas in AlGaN/GaN heterostructures with varied Al content. - Jinfeng Zhang; Yue Hao 001; Jincheng Zhang; JinYu Ni (Sci. China Ser. F Inf. Sci., 2008)

Finite element analysis and optimization of temperature field in GaN-MOCVD reactor. - Jincheng Zhang; Zhiming Li; Yue Hao 001; Hao Wang; Peixian Li (Sci. China Inf. Sci., 2010)

The impact of trapping centers on AlGaN/GaN resonant tunneling diode. - Haoran Chen; Lin-An Yang; Xiaoxian Liu; Zhangming Zhu; Jun Luo; Yue Hao 001 (IEICE Electron. Express, 2013)

Erratum: The impact of trapping centers on AlGaN/GaN resonant tunneling diode [IEICE Electronics Express Vol 10 (2013) No 19 pp 20130588]. - Haoran Chen; Lin-An Yang; Xiaoxian Liu; Zhangming Zhu; Jun Luo; Yue Hao 001 (IEICE Electron. Express, 2013)

Novel silicon-controlled rectifier (SCR) for digital and high-voltage ESD power supply clamp. - Peng Zhang; Yuan Wang 001; Xing Zhang 002; Xiaohua Ma 001; Yue Hao 001 (Sci. China Inf. Sci., 2014)

Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress. - Wei-Wei Chen; Xiaohua Ma 001; Bin Hou; Sheng-Lei Zhao; Jiejie Zhu; Jincheng Zhang; Yue Hao 001 (Microelectron. Reliab., 2014)

AlGaN channel MIS-HEMTs with a very high breakdown electric field and excellent high-temperature performance. - Xiangdong Li; Weihang Zhang; Mengdi Fu; Jincheng Zhang; Haiqing Jiang; Zhenxing Guo; Yu Zou; Renyuan Jiang; Zuo-Chen Shi; Yue Hao 001 (IEICE Electron. Express, 2015)

The characteristics of fluorinated gate dielectric AlGaN/GaN MIS-HEMT. - Minhan Mi; Yunlong He; Bin Hou; Meng Zhang; Zuo-Chen Shi; Xiaohua Ma 001; Peixian Li; Yue Hao 001 (IEICE Electron. Express, 2015)

A 5-8 GHz wideband 100 W internally matched GaN power amplifier. - Bochao Zhao; Xiaohua Ma 001; Yang Lu; Jiaxin Zheng; Wenzhe Han; Honghe Zhang; Yanlong Zhang; Yue Hao 001 (IEICE Electron. Express, 2015)

A High-Throughput VLSI Architecture Design of Arithmetic Encoder in JPEG2000. - Zhixiong Di; Yue Hao 001; Jiangyi Shi; Peijun Ma (J. Signal Process. Syst., 2015)

A novel graphical method for dual-frequency two sections transformer. - Bochao Zhao; Peijun Ma; Yang Lu; Jiaxin Zheng; Hengshuang Zhang; Zuo-Chen Shi; Xiaohua Ma 001; Yue Hao 001 (IEICE Electron. Express, 2016)

Threshold voltage shift and interface/border trapping mechanism in Al2O3/AlGaN/GaN MOS-HEMTs. - Jiejie Zhu; Bin Hou; Lixiang Chen; Qing Zhu; Ling Yang 003; Xiaowei Zhou; Peng Zhang; Xiaohua Ma 001; Yue Hao 001 (IRPS, 2018)

Evolution of Defect in AlGaN-based Deep Ultraviolet Light Emitting Diodes During Electrical Stress. - Yingzhe Wang; Xuefeng Zheng; Jiaduo Zhu; Shengrui Xu; Xiaohua Ma 001; Jincheng Zhang; Yue Hao 001; Linlin Xu; Jiangnan Dai; Peixian Li (IRPS, 2020)

Hardware Architecture and Algorithm Co-Design for Multi-Layer Photonic Neuromorphic Network with Excitable VCSELs-SA. - Shuiying Xiang; Zhenxing Ren; Yahui Zhang; Xingxing Guo; Ziwei Song; Aijun Wen; Yue Hao 001 (OFC, 2020)

Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs. - Shuang Liu; Xiufeng Song; Jincheng Zhang; Sheng-Lei Zhao; Jun Luo; Hong Zhang; Yachao Zhang 002; Weihang Zhang; Hong Zhou; Zhihong Liu; Yue Hao 001 (IEEE Access, 2020)

Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al2O3 Gate Dielectric. - Zeyang Ren; Qi He; Jiamin Xu; Guansheng Yuan; Jinfeng Zhang; Jincheng Zhang; Kai Su; Yue Hao 001 (IEEE Access, 2020)

Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrOx/Al2O3 Gate Dielectrics. - Kai Su; Zeyang Ren; Yue Peng; Jinfeng Zhang; Jincheng Zhang; Yachao Zhang 002; Qi He; Chunfu Zhang; Yue Hao 001 (IEEE Access, 2020)

Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature. - Qing Zhu; Xiaohua Ma 001; Bin Hou; Mei Wu; Jiejie Zhu; Ling Yang 003; Meng Zhang; Yue Hao 001 (IEEE Access, 2020)

Enhanced memory capacity of a neuromorphic reservoir computing system based on a VCSEL with double optical feedbacks. - Xingxing Guo; Shuiying Xiang; Yahui Zhang; Aijun Wen; Yue Hao 001 (Sci. China Inf. Sci., 2020)

Real-time optical spike-timing dependent plasticity in a single VCSEL with dual-polarized pulsed optical injection. - Shuiying Xiang; Yanan Han; Xingxing Guo; Aijun Wen; Genquan Han; Yue Hao 001 (Sci. China Inf. Sci., 2020)

Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration. - Kui Dang; Jincheng Zhang; Hong Zhou; Shan Yin; Tao Zhang 090; Jing Ning; Yachao Zhang 002; Zhaoke Bian; Jiabo Chen; Xiaoling Duan; Sheng-Lei Zhao; Yue Hao 001 (IEEE Trans. Ind. Electron., 2020)

All-Inorganic Two-Dimensional Ruddlesden-Popper Perovskite Cs2PbI2Cl2 Nanosheet Films for Self-Powered, Visible-Blind UV Photodetectors. - Yanshuang Ba; Sunjie HuangFu; Miaomiao Li; Junxiao Ma; Weidong Zhu; Dazheng Chen; He Xi; Jincheng Zhang; Chunfu Zhang; Yue Hao 001 (ASICON, 2021)

Novel Selective Area Recessed Regrowth-free Ohmic Contacts to High Al-content Barrier. - Hao Lu 012; Xiaohua Ma 001; Bin Hou; Ling Yang 003; Teng Huo; Zeyan Si; Yue Hao 001 (ICTA, 2021)

Recent progress of integrated circuits and optoelectronic chips. - Yue Hao 001; Shuiying Xiang; Genquan Han; Jincheng Zhang; Xiaohua Ma 001; Zhangming Zhu; Xingxing Guo; Yahui Zhang; Yanan Han; Ziwei Song; Yan Liu; Ling Yang 003; et al. (Sci. China Inf. Sci., 2021)

High mobility germanium-on-insulator p-channel FinFETs. - Huan Liu; Genquan Han; Jiuren Zhou; Yan Liu; Yue Hao 001 (Sci. China Inf. Sci., 2021)

A modified supervised learning rule for training a photonic spiking neural network to recognize digital patterns. - Yahui Zhang; Shuiying Xiang; Xingxing Guo; Aijun Wen; Yue Hao 001 (Sci. China Inf. Sci., 2021)

Computing Primitive of Fully VCSEL-Based All-Optical Spiking Neural Network for Supervised Learning and Pattern Classification. - Shuiying Xiang; Zhenxing Ren; Ziwei Song; Yahui Zhang; Xingxing Guo; Genquan Han; Yue Hao 001 (IEEE Trans. Neural Networks Learn. Syst., 2021)

Systematic Study on Positive Bias Temperature Instability(PBTI) of ZrO2-based Ge nMOSFETs with Interlayer Passivations. - Lulu Chou; Xiao Yu; Huan Liu; Yan Liu; Genquan Han; Yue Hao 001 (ICICDT, 2022)

First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF Applications. - Hao Lu 012; Likun Zhou; Longge Deng; Ling Yang 003; Bin Hou; Xiaohua Ma 001; Yue Hao 001 (ICTA, 2022)

A Novel Concept of using Double Threshold Voltage Coupling to Improve the linearity of AlGaN/GaN HEMTs for millimeter-wave applications. - Pengfei Wang; Minhan Mi; Sirui An; Xiang Du; Xiaohua Ma 001; Yue Hao 001 (ICTA, 2022)

Controlling Memristance and Negative Differential Resistance in Point-Contacted Metal-Oxides-Metal Heterojunctions: Role of Oxygen Vacancy Electromigration and Electron Hopping. - Xin Gan; Yueying Zhang; Yupeng Hui; Shaoxuan Liu; Lei Wang; Jincheng Zhang; Yue Hao 001; Haijiao Harsan Ma (Adv. Intell. Syst., 2022)

Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method. - Siyu Liu; Xiaohua Ma 001; Jiejie Zhu; Minhan Mi; Jingshu Guo; Jielong Liu; Yilin Chen; Qing Zhu; Ling Yang 003; Yue Hao 001 (Sci. China Inf. Sci., 2022)

Experimental demonstration of photonic spike-timing-dependent plasticity based on a VCSOA. - Ziwei Song; Shuiying Xiang; Xingyu Cao; Shihao Zhao; Yue Hao 001 (Sci. China Inf. Sci., 2022)

Unidirectional p-GaN gate HEMT with composite source-drain field plates. - Haiyong Wang; Wei Mao; Shenglei Zhao; Yuanhao He; Jiabo Chen; Ming Du; Xuefeng Zheng; Chong Wang; Chunfu Zhang; Jincheng Zhang; Yue Hao 001 (Sci. China Inf. Sci., 2022)

Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs. - Yinhe Wu; Jincheng Zhang; Shenglei Zhao; Zhaoxi Wu; Zhongxu Wang; Bo Mei; Chao Duan; Dujun Zhao; Weihang Zhang; Zhihong Liu; Yue Hao 001 (Sci. China Inf. Sci., 2022)

Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate. - Dujun Zhao; Zhaoxi Wu; Chao Duan; Bo Mei; Zhongyang Li; Zhongxu Wang; Qing Tang; Qing Yang; Yinhe Wu; Weihang Zhang; Zhihong Liu; Shenglei Zhao; et al. (Sci. China Inf. Sci., 2022)

Hardware-algorithm collaborative computing with photonic spiking neuron chip based on integrated Fabry-Pérot laser with saturable absorber. - Shuiying Xiang; Yuechun Shi; Xingxing Guo; Yahui Zhang; Hongji Wang; Dianzhuang Zheng; Ziwei Song; Yanan Han; Shuang Gao; Shihao Zhao; Biling Gu; Hailing Wang; et al. (CoRR, 2022)

Spiking SiamFC++: Deep Spiking Neural Network for Object Tracking. - Shuiying Xiang; Tao Zhang 090; Shuqing Jiang; Yanan Han; Yahui Zhang; Chenyang Du; Xingxing Guo; Licun Yu; Yuechun Shi; Yue Hao 001 (CoRR, 2022)

A Broadband Amplifier With Flat Bandwidth for Modulator and Measurement Driver Circuits. - Yuchen Wang; Xiaohua Ma 001; Yang Lu; Bochao Zhao; Ziyue Zhao; Chupeng Yi; Ling Yang 003; Jiangyi Shi; Yue Hao 001 (IEEE Trans. Instrum. Meas., 2022)

2022 roadmap on neuromorphic devices and applications research in China. - Qing Wan; Changjin Wan; Huaqiang Wu; Yuchao Yang 001; Xiaohe Huang; Peng Zhou 021; Lin Chen; Tian-Yu Wang; Yi Li 049; Kanhao Xue; Yu-Hui He; Xiangshui Miao; et al. (Neuromorph. Comput. Eng., 2022)

Ga2O3 Heterojunction PN Diodes with Suppressed Background Carrier Concentration for Improved Breakdown Voltage. - Pengfei Dong; Chenlu Wang; Qinglong Yan; Yingming Wang; Jian Wang; Sami Alghamdi; Zhihong Liu; Jincheng Zhang; Hong Zhou; Yue Hao 001 (DRC, 2023)

Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light. - Yilin Chen; Qing Zhu; Jiejie Zhu; Minhan Mi; Meng Zhang; Yuwei Zhou; Ziyue Zhao; Xiaohua Ma 001; Yue Hao 001 (Sci. China Inf. Sci., 2023)

1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate. - Sheng-Lei Zhao; Jincheng Zhang; Yachao Zhang 002; Lansheng Feng; Shuang Liu; Xiufeng Song; Yixin Yao; Jun Luo; Zhihong Liu; Shengrui Xu; Yue Hao 001 (Sci. China Inf. Sci., 2023)

2.29-kV GaN-based double-channel Schottky barrier diodes on Si substrates with high VON uniformity. - Ren Huang; Weihang Zhang; Jincheng Zhang; Chunxu Su; Xi Liu; Liyu Fu; Yue Hao 001 (Sci. China Inf. Sci., 2023)

A compact model of DC I-V characteristics for depleted Ga2O3 MOSFETs. - Xiaole Jia; Yibo Wang; Jinyu Yang; Yan Liu; Yue Hao 001; Genquan Han (Microelectron. J., 2023)

$ beta$-Ga2O3-on-SiC RF MOSFETs $ beta$. - Min Zhou; Hong Zhou; Jincheng Zhang; Yue Hao 001 (TENCON, 2024)

71 GHz-fmax β-Ga2O3-on-SiC RF Power MOSFETs with Record Pout=3.1 W/mm and PAE=50.8% at 2 GHz, Pout= 2.3 W/mm at 4 GHz, and Low Microwave Noise Figure. - Min Zhou; Hong Zhou; Mengwei Si; Guangjie Gao; Xiaojin Chen; Xiaoxiao Zhu; Kui Dang; Peijun Ma; Xiaohua Ma 001; Xuefeng Zheng; Zhihong Liu; Jincheng Zhang; et al. (VLSI Technology and Circuits, 2024)

Cascade and Extensible In-Memory Arithmetic Computing in 2T1R ReRAM Arrays Using Time-Sum-Logic Design. - Wei Zhu; Yi-Xing He; Hao-Nan Li; Xian-Qin Liu; Siwen Zhang; Lei Wang; Jiang Zhu; Yue-Qi Wang; Jincheng Zhang; Yue Hao 001; Haijiao Harsan Ma (IEEE Access, 2024)

A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness. - Sirui An; Minhan Mi; Pengfei Wang; Sijia Liu; Qing Zhu; Meng Zhang; Zhihong Chen; Jielong Liu; Siyin Guo; Can Gong; Xiaohua Ma 001; Yue Hao 001 (Sci. China Inf. Sci., 2024)

High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation. - Qingyuan Chang; Bin Hou; Ling Yang 003; Mei Wu; Meng Zhang; Hao Lu 012; Fuchun Jia; Xuerui Niu; Chunzhou Shi; Jiale Du; Mao Jia; Qian Yu; et al. (Sci. China Inf. Sci., 2024)

High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz. - Hanghai Du; Lu Hao; Zhihong Liu; Zeyu Song; Yachao Zhang 002; Kui Dang; Jin Zhou; Jing Ning; Zan Li; Jincheng Zhang; Yue Hao 001 (Sci. China Inf. Sci., 2024)

Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate. - Wen Hong; Chao Zhang; Fang Zhang; Xuefeng Zheng; Xiaohua Ma 001; Yue Hao 001 (Sci. China Inf. Sci., 2024)

Tunable lithium niobate metasurfaces for phase-only modulation based on quasi-bound states in the continuum. - Ruoying Kanyang; Cizhe Fang; Yibo Wang; Xiaoxi Li; Xiangyu Zeng; Yan Liu; Yue Hao 001; Genquan Han (Sci. China Inf. Sci., 2024)

Two-dimensional materials for future information technology: status and prospects. - Hao Qiu; Zhihao Yu; Tiange Zhao; Qi Zhang; Mingsheng Xu; Peifeng Li; Taotao Li; Wenzhong Bao; Yang Chai; Shula Chen; Yiqi Chen; Hui-Ming Cheng; et al. (Sci. China Inf. Sci., 2024)

Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure. - Chunzhou Shi; Ling Yang 003; Meng Zhang; Hao Lu 012; Mei Wu; Bin Hou; Xuerui Niu; Qian Yu; Wenliang Liu 003; Wenze Gao; Xiaohua Ma 001; Yue Hao 001 (Sci. China Inf. Sci., 2024)

Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic. - Yong Zhang; Dongxin Tan; Cizhe Fang; Zheng-Dong Luo; Qiyu Yang; Qiao Zhang; Yu Zhang; Xuetao Gan; Yan Liu; Yue Hao 001; Genquan Han (Sci. China Inf. Sci., 2024)

Low-high-low doped Ga2O3 Schottky barrier IMPATT diodes on various crystal orientations for terahertz applications. - Xin-Yi Wang; Lin-An Yang; Xuan Huang; Jian-Hua Zhou; Xiao-Hua Ma 001; Yue Hao 001 (Microelectron. J., 2024)

Effect of 60Coγ ray radiation on electrical properties of SiGe HBTs at low temperatures. - Yahui Feng; Hongxia Guo; Wuying Ma; Jiawen Hu; Xiaoping Ouyang 003; Jinxin Zhang; Fengqi Zhang; Hong Zhang; Ruxue Bai; Xiaohua Ma 001; Yue Hao 001 (Microelectron. J., 2024)

Judgmentally adjusted Q-values based on Q-ensemble for offline reinforcement learning. - Wenzhuo Liu; Shuying Xiang; Tao Zhang 090; Yanan Han; Xingxing Guo; Yahui Zhang; Yue Hao 001 (Neural Comput. Appl., 2024)

1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations. - Yitao Feng; Hong Zhou; Sami Alghamdi; Hao Fang; Xiaorong Zhang; Yanbo Chen; Guotao Tian; Saud Wasly; Yue Hao 001; Jincheng Zhang (Sci. China Inf. Sci., 2025)

High linearity GaN HEMT by optimized three-dimensional-gated modulation via top-MIS-gate nanowire channel structure. - Can Gong; Minhan Mi; Yuwei Zhou; Pengfei Wang; Hanzhen Li; Xinyi Wen; Ting Meng; Sirui An; Xiang Du; Kai Cheng; Meng Zhang; Qing Zhu; et al. (Sci. China Inf. Sci., 2025)

Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT. - Mao Jia; Bin Hou; Ling Yang 003; Meng Zhang; Mei Wu; Hao Lu 012; Xitong Hong; Zhiqiang Xue; Jiale Du; Qingyuan Chang; Qian Xiao; Xiaohua Ma 001; et al. (Sci. China Inf. Sci., 2025)

Al2O3/AlN/GaN MOS-HEMTs on 6-inch silicon substrate with high transconductance and state-of-the-art fmax × LG. - Lingjie Qin; Jiejie Zhu; Bowen Zhang; Yuxi Zhou; Huantao Duan; Huimei Ma; Mengdi Li; Simei Huang; Jin Rao; Xiaohua Ma 001; Yue Hao 001 (Sci. China Inf. Sci., 2025)

Electro-optic tuning in ferroelectric capacitor with photonic crystal nanobeam cavity. - Tongtong Wang; Yong Zhang; Danyang Yao; Zhi Jiang; Dongxin Tan; Jie Wen; Qiyu Yang; Xuetao Gan; Yan Liu; Yue Hao 001; Genquan Han (Sci. China Inf. Sci., 2025)

Physics based circuit compatible model for hybrid antiferroelectric random access memory. - Qiuxia Wu; Yue Peng; Wenwu Xiao; Wenxuan Ma 008; Shuo Zhang; Litao Sun; Chunfu Zhang; Xiaohua Ma 001; Yue Hao 001 (Sci. China Inf. Sci., 2025)

24.4 THz·V fT×BV figure-of-merit AlN/GaN/AlN MISHEMTs with thin AlN buffer layer. - Chaoqun Zhang; Hong Zhou; Sami Alghamdi; Kun Zhang; Zhihong Liu; Yue Hao 001; Jingcheng Zhang (Sci. China Inf. Sci., 2025)

Class-F-1 GaN Power Amplifier Integrated Active Antenna With Increased Efficiency for Wireless Power Transmission Applications. - Wen-Liang Liu 003; Jing-Ya Deng; Chupeng Yi; Zi-Yue Zhao; Ting Feng; Xin Liu 063; Yang Lu; Xiao-Hua Ma 001; Yue Hao 001 (IEEE Internet Things J., 2025)

A comprehensive study on the electrical effects of avalanche region on GaN Schottky barrier IMPATT diodes through injection phases. - Xuan Huang; Lin-An Yang; Jian-Hua Zhou; Xin-Yi Wang; Dong-Liang Chen; Xiaohua Ma 001; Yue Hao 001 (Microelectron. J., 2025)

Study of GaN Schottky barrier IMPATT diodes with a self-aligned field plate for terahertz applications. - Xuan Huang; Lin-An Yang; Jian-Hua Zhou; Xin-Yi Wang; Xiao-Hua Ma 001; Yue Hao 001 (Microelectron. J., 2025)

S4-KD: A single step spiking SiamFC+ + for object tracking with knowledge distillation. - Wenzhuo Liu; Shuiying Xiang; Tao Zhang 090; Yanan Han; Yahui Zhang; Xingxing Guo; Licun Yu; Yue Hao 001 (Neural Networks, 2025)

GNN-Based Hardware Trojan Detection at Register Transfer Level Leveraging Multiple-Category Features. - Peijun Ma; Ge Shang; Hongjin Liu; Jiangyi Shi; Weitao Pan; Yan Zhang; Yue Hao 001 (IEEE Trans. Very Large Scale Integr. Syst., 2025)

Corrections to "GNN-Based Hardware Trojan Detection at Register Transfer Level Leveraging Multiple-Category Features". - Peijun Ma; Ge Shang; Hongjin Liu; Jiangyi Shi; Weitao Pan; Yan Zhang; Yue Hao 001 (IEEE Trans. Very Large Scale Integr. Syst., 2025)

Hardware Trojan Detection Methods for Gate-Level Netlists Based on Graph Neural Networks. - Peijun Ma; Jie Li; Hongjin Liu; Jiangyi Shi; Shaolin Zhang; Weitao Pan; Yue Hao 001 (IEEE Trans. Computers, 2025)

A Novel Transform Accelerator With Fast Kernel Selection and Efficient Transform Circuit. - Zhijian Hao; Chenlong He; Jiaming Liu; Qi Zheng 004; Jinchang Xu; Peijun Ma; Xiaohua Ma 001; Yue Hao 001 (IEEE Trans. Circuits Syst. I Regul. Pap., 2025)

Design of a Timer Queue Supporting Dynamic Update Operations. - Zekun Wang; Binghao Yue; Weitao Pan; Jiangyi Shi; Yue Hao 001 (CoRR, 2025)