Collector Doping Design for Improving DC and RF Performance in InGaP/GaAs HBTs before Onset of Kirk Effect. - Che-ming Wang; Kuang-Po Hsueh; Yue-Ming Hsin (IEICE Trans. Electron., 2005)

Simulation Study of a Novel Collector-up npn InGaP/GaAs Heterojunction Bipolar Transistor with a p-Type Doping Buried Layer for Current Confinement. - Hung-tsao Hsu; Yue-Ming Hsin (IEICE Trans. Electron., 2007)

A low-power differential injection-locked frequency divider with output power flatness in 0.5 μm E/D-mode GaAs PHEMT. - Fan-Hsiu Huang; Yue-Ming Hsin (Microelectron. J., 2013)

A dual-gate 2nd/3rd-order subharmonic injection-locked oscillator in GaAs PHEMT. - Fan-Hsiu Huang; Yue-Ming Hsin (Microelectron. J., 2014)

The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors. - Hsien-Chin Chiu; Wen-Yu Lin; W. J. Hsueh; Pei-Chin Chiu; Yue-Ming Hsin; Jen-Inn Chyi (Microelectron. Reliab., 2015)

GaAsSb/InGaAs tunnel field effect transistor with a pocket layer. - Tzu-Yu Yu; Liang-Shuan Peng; Chun-Wei Lin; Yue-Ming Hsin (Microelectron. Reliab., 2018)