PBTI and HCI degradations of ultrathin body InGaAs-On-Insulator nMOSFETs fabricated by wafer bonding. - Xiaoyu Tang; J. Lu; Rui Zhang 024; Yi Zhao; Wangran Wu; Chang Liu; Yi Shi; Ziqian Huang; Yuechan Kong (IRPS, 2015)

A Large-Signal Model for Two-Dimensional Hole Gas Diamond MOSFET Based on the QPZD. - Yu Fu; Ruimin Xu; Jianjun Zhou; Xinxin Yu; Zhang Wen; Yuechan Kong; Tangsheng Chen; Yong Zhang 039; Bo Yan; Jijun He; Yuehang Xu (IEEE Access, 2019)