Design and simulation study of multi-trench termination for 1200V SiC devices with charge coupled drift region. - Chongning Zhao; Dongqing Hu; Yuechao Zheng; Yunpeng Jia; Xintian Zhou; Yu Wu 015; Ting Li (EITCE, 2022)

Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field plate protection. - Yuechao Zheng; Dongqing Hu; Chongning Zhao; Yunpeng Jia; Xintian Zhou; Yu Wu 015; Ting Li (EITCE, 2022)