A 48nm 32Gb 8-level NAND flash memory with 5.5MB/s program throughput. - Seung-Ho Chang; Sok-Kyu Lee; Seong-Je Park; Min-Joong Jung; Jung-Chul Han; In-Soo Wang; Kyu-Hee Lim; Jung-Hwan Lee; Ji-Hwan Kim; Won-Kyung Kang; Tai-Kyu Kang; Hee-Su Byun; et al. (ISSCC, 2009)

A 32Gb MLC NAND-flash memory with Vth-endurance-enhancing schemes in 32nm CMOS. - Changhyuk Lee; Sok-Kyu Lee; Sunghoon Ahn; Jinhaeng Lee; Wonsun Park; Yongdeok Cho; Chaekyu Jang; Chulwoo Yang; Sanghwa Chung; In-Suk Yun; Byoungin Joo; Byoungkwan Jeong; et al. (ISSCC, 2010)

High-voltage wordline generator for low-power program operation in NAND flash memories. - Samkyu Won; Yujong Noh; Hyunchul Cho; Jeil Ryu; Sungwook Choi; Sungdae Choi; DuckJu Kim; Junseop Chung; Bong-Seok Han; Eui-Young Chung (A-SSCC, 2011)

A 32-Gb MLC NAND Flash Memory With Vth Endurance Enhancing Schemes in 32 nm CMOS. - Changhyuk Lee; Sok-Kyu Lee; Sunghoon Ahn; Jinhaeng Lee; Wonsun Park; Yongdeok Cho; Chaekyu Jang; Chulwoo Yang; Sanghwa Chung; In-Suk Yun; Byoungin Joo; Byoungkwan Jeong; et al. (IEEE J. Solid State Circuits, 2011)

13.2 A 1Tb 4b/Cell 96-Stacked-WL 3D NAND Flash Memory with 30MB/s Program Throughput Using Peripheral Circuit Under Memory Cell Array Technique. - Hwang Huh; Wanik Cho; Jinhaeng Lee; Yujong Noh; Yongsoon Park; Sunghwa Ok; Jongwoo Kim; Kayoung Cho; Hyunchul Lee; Geonu Kim; Kangwoo Park; Kwanho Kim; et al. (ISSCC, 2020)

A 1-Tb, 4b/Cell, 176-Stacked-WL 3D-NAND Flash Memory with Improved Read Latency and a 14.8Gb/mm2 Density. - Wanik Cho; Jongseok Jung; Jongwoo Kim; Junghoon Nam; Sangkyu Lee; Yujong Noh; Dauni Kim; Wanseob Lee; Kayoung Cho; Kwanho Kim; Heejoo Lee; Sooyeol Chai; et al. (ISSCC, 2022)

A High-Performance 1Tb 3b/Cell 3D-NAND Flash with a 194MB/s Write Throughput on over 300 Layers $ mathsf{i}$. - Bvunarvul Kim; Seungpil Lee; Beomseok Hah; Kanawoo Park; Yongsoon Park; Kangwook Jo; Yujong Noh; Hyeon-Cheon Seol; Hyunsoo Lee; Jae-Hyeon Shin; Seongjin Choi; Youngdon Jung; et al. (ISSCC, 2023)