Fast Recovery Performance of β-Ga2O3 Trench MOS Schottky Barrier Diodes. - Akio Takatsuka; Kohei Sasaki; Daiki Wakimoto; Quang Tu Thieu; Yuki Koishikawa; Jun Arima; Jun Hirabayashi; Daisuke Inokuchi; Yoshiaki Fukumitsu; Akito Kuramata; Shigenobu Yamakoshi (DRC, 2018)