Electrical Properties of Ba0.5Sr0.5Ta2O6 Thin Film Fabricated by Sol-Gel Method. - Li Lu; Masahiro Echizen; Takashi Nishida; Kiyoshi Uchiyama; Yukiharu Uraoka (IEICE Trans. Electron., 2010)

A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode with Normally-off Operation, High Mobility and Reliability for 3D Integrated Devices. - Kaito Hikake; Zhuo Li; Junxiang Hao; Chitra Pandy; Takuya Saraya; Toshiro Hiramoto; Takanori Takahashi; Mutsunori Uenuma; Yukiharu Uraoka; Masaharu Kobayashi (VLSI Technology and Circuits, 2023)

Performance and Reliability of Nanosheet Oxide Semiconductor FETs with ALD-Grown InGaO for 3D Integration (Invited). - Masaharu Kobayashi; Kaito Hikake; Zhuo Li; Junxiang Hao; Chitra Pandy; Takuya Saraya; Toshiro Hiramoto; Takanori Takahashi; Mutsunori Uenuma; Yukiharu Uraoka (IRPS, 2024)

Scaling Potential of Nanosheet Oxide Semiconductor FETs for Monolithic 3D Integration-ALD Material Engineering, High-Field Transport, Statistical Variability. - Kaito Hikake; Xingyu Huang; Sung-Hun Kim; Kota Sakai; Zhuo Li; Tomoko Mizutani; Takuya Saraya; Toshiro Hiramoto; Takanori Takahashi; Mutsunori Uenuma; Yukiharu Uraoka; Masaharu Kobayashi (VLSI Technology and Circuits, 2024)