A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface. - Noboru Shibata; Kazushige Kanda; Toshiki Hisada; Katsuaki Isobe; Manabu Sato; Yui Shimizu; Takahiro Shimizu; Takahiro Sugimoto; Tomohiro Kobayashi; Kazuko Inuzuka; Naoaki Kanagawa; Yasuyuki Kajitani; et al. (ISSCC, 2012)

A 19 nm 112.8 mm2 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface. - Kazushige Kanda; Noboru Shibata; Toshiki Hisada; Katsuaki Isobe; Manabu Sato; Yui Shimizu; Takahiro Shimizu; Takahiro Sugimoto; Tomohiro Kobayashi; Naoaki Kanagawa; Yasuyuki Kajitani; Takeshi Ogawa; et al. (IEEE J. Solid State Circuits, 2013)

11.1 A 512Gb 3b/cell flash memory on 64-word-line-layer BiCS technology. - Ryuji Yamashita; Sagar Magia; Tsutomu Higuchi; Kazuhide Yoneya; Toshio Yamamura; Hiroyuki Mizukoshi; Shingo Zaitsu; Minoru Yamashita; Shunichi Toyama; Norihiro Kamae; Juan Lee; Shuo Chen; et al. (ISSCC, 2017)