In-depth Analysis of the Hafnia Ferroelectrics as a Key Enabler for Low Voltage & QLC 3D VNAND Beyond 1K Layers: Experimental Demonstration and Modeling. - Giuk Kim; Hyojun Choi; Hunbeom Shin; Sangho Lee; Sangmok Lee; Yunseok Nam; Minhyun Jung; Ilho Myeong; Kijoon Kim; Jongho Woo; Suhwan Lim; Kwangsoo Kim; et al. (VLSI Technology and Circuits, 2024)

The Opportunity of Anti-ferroelectrics in FeFET for Emerging Non-Volatile Memory Applications. - Hyojun Choi; Giuk Kim; Hunbeom Shin; Yunseok Nam; Sanghun Jeon; Kwangsoo Kim; Suhwan Lim; Jongho Woo; Wanki Kim; Daewon Ha; Jinho Ahn (IRPS, 2025)