Electrochemical formation of N-type GaN and N-type InP porous structures for chemical sensor applications. - Taketomo Sato; Xiaoyi Zhang; Keisuke Ito; Satoru Matsumoto; Yusuke Kumazaki (IEEE SENSORS, 2016)

Remarkable Current Collapse Suppression in GaN HEMTs on Free-standing GaN Substrates. - Yusuke Kumazaki; Keiji Watanabe; Toshihiro Ohki; Junji Kotani; Shiro Ozaki; Yoshitaka Niida; Kozo Makiyama; Yuichi Minoura; Naoya Okamoto; Norikazu Nakamura (BCICTS, 2019)

Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier. - Masaru Sato 001; Yusuke Kumazaki; Naoya Okamoto; Toshihiro Ohki; Naoko Kurahashi; Masato Nishimori; Atsushi Yamada; Junji Kotani; Naoki Hara; Keiji Watanabe (IEICE Trans. Electron., 2023)

High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors. - Yusuke Kumazaki; Shiro Ozaki; Naoya Okamoto; Naoki Hara; Yasuhiro Nakasha; Masaru Sato 001; Toshihiro Ohki (IEICE Trans. Electron., 2023)

Sub-THz SC-FDE MIMO Systems with Deep Neural Network Equalization for 100 Gbps of 6G. - Liang Zhou; Masafumi Tsutsui; Yasuhiro Nakasha; Shiro Ozaki; Takashi Dateki; Yusuke Kumazaki; Toshihiro Ohki (VTC Fall, 2024)

A 9.3% PAE, 9.2-dBm POUT power amplifier and -1.9-dB Gc upconverting mixer using InP-based MOS HEMTs for 300-GHz phased-array transmitters. - Yasuhiro Nakasha; Shiro Ozaki; Yusuke Kumazaki; Naoya Okamoto; Shoichi Shiba; Masaru Sato 001; Naoki Hara; Toshihiro Ohki (IEICE Electron. Express, 2025)