Experimental Comparison of AlGaN/GaN-on-Si Schottky Barrier Diode With and Without Recessed Anode. - Qinglei Bu; Yutao Cai; Miao Cui; Huiqing Wen; Wen Liu 010 (ICICDT, 2019)

Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices. - Yutao Cai; Yang Wang; Miao Cui; Wen Liu 010; Huiqing Wen; Cezhou Zhao; Ivona Z. Mitrovic; Stephen Taylor; Paul R. Chalker (ICICDT, 2019)

The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters. - Miao Cui; Yutao Cai; Qinglei Bu; Wen Liu 010; Huiqing Wen; Ivona Z. Mitrovic; Stephen Taylor; Paul R. Chalker; Cezhou Zhao (ICICDT, 2019)

Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices. - Yutao Cai; Yang Wang; Ye Liang; Yuanlei Zhang; Wen Liu 010; Huiqing Wen; Ivona Z. Mitrovic; Cezhou Zhao (IEEE Access, 2020)

Threshold Voltage Instability in D-mode AlGaN/GaN MIS-HEMTs with Al2O3 Gate Dielectric. - Ye Liang; Yuanlei Zhang; Yutao Cai; Zhaoyi Wang; Yinchao Zhao; Huiqing Wen; Wen Liu 010 (ICICDT, 2021)

Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al2O3/ZrOx/Al2O3 charge trapping layer. - Jiachen Duan; Yuanlei Zhang; Ye Liang; Yutao Cai; Wen Liu 010 (ICICDT, 2022)