Ka-Band GaN Large-Signal Model Considering Trap Effect on Nonlinear Capacitance by Using Transient S-Parameters Measurement. - Yutaro Yamaguchi 002; Tomohiro Otsuka; Masatake Hangai; Shintaro Shinjo; Toshiyuki Oishi (BCICTS, 2018)

A Ka-Band CW 15.5W 15.6% Fractional Bandwidth GaN Power Amplifier MMIC Using Wideband BPF Inter-stage Matching Network. - Keigo Nakatani; Yutaro Yamaguchi 002; Masatake Hangai; Shintaro Shinjo (BCICTS, 2019)

Study of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD Simulation. - Tomohiro Otsuka; Yutaro Yamaguchi 002; Shintaro Shinjo; Toshiyuki Oishi (BCICTS, 2019)

Millimeter-Wave GaN Power Amplifier MMICs for 5G Application. - Keigo Nakatani; Yutaro Yamaguchi 002; Yuji Komatsuzaki; Shintaro Shinjo (ISCAS, 2019)

GaN Amplifiers of Selectable Output Power Function with Semi-Custom Matching Networks. - Yutaro Yamaguchi 002; Masatake Hangai; Shintaro Shinjo; Takaaki Yoshioka; Naoki Kosaka (IEICE Trans. Electron., 2019)

A Wideband and High Efficiency Ka-band GaN Doherty Power Amplifier for 5G Communications. - Yutaro Yamaguchi 002; Keigo Nakatani; Shintaro Shinjo (BCICTS, 2020)

Millimeter-Wave GaN Device Modeling for Power Amplifiers. - Yutaro Yamaguchi 002; Keigo Nakatani; Koon Hoo Teo; Shintaro Shinjo (DRC, 2020)

Overview and Prospects of High Power Amplifier Technology Trend for 5G and beyond 5G Base Stations. - Koji Yamanaka; Shintaro Shinjo; Yuji Komatsuzaki; Shuichi Sakata; Keigo Nakatani; Yutaro Yamaguchi 002 (IEICE Trans. Electron., 2021)

A Review of GaN MMIC Power Amplifier Technologies for Millimeter-Wave Applications. - Keigo Nakatani; Yutaro Yamaguchi 002; Takuma Torii; Masaomi Tsuru (IEICE Trans. Electron., 2022)