A 20ns-write 45ns-read and 1014-cycle endurance memory module composed of 60nm crystalline oxide semiconductor transistors. - Shuhei Maeda; Satoru Ohshita; Kazuma Furutani; Yuto Yakubo; Takahiko Ishizu; Tomoaki Atsumi; Yoshinori Ando; Daisuke Matsubayashi; Kiyoshi Kato; Takashi Okuda; Masahiro Fujita; Shunpei Yamazaki (ISSCC, 2018)

Micro Short-Circuit Detector Including S/H Circuit for 1hr Retention and 52dB Comparator Composed of C-Axis Aligned Crystalline IGZO FETs for Li-Ion Battery Protection IC. - Hiroki Inoue; Takeshi Aoki; Fumika Akasawa; Toshiki Hamada; Toshihiko Takeuchi; Kousei Nei; Takako Seki; Yuto Yakubo; Kei Takahashi; Shuji Fukai; Takahiko Ishizu; Munehiro Kozuma; et al. (ISSCC, 2019)

A 48 MHz 880-nW Standby Power Normally-Off MCU with 1 Clock Full Backup and 4.69-μs Wakeup Featuring 60-nm Crystalline In-Ga-Zn Oxide BEOL-FETs. - Takahiko Ishizu; Yuto Yakubo; Kazuma Furutani; Atsuo Isobe; Masashi Fujita; Tomoaki Atsumi; Yoshinori Ando; Tsutomu Murakawa; Kiyoshi Kato; Masahiro Fujita; Shunpei Yamazaki (VLSI Circuits, 2019)

Crystalline Oxide Semiconductor-based 3D Bank Memory System for Endpoint Artificial Intelligence with Multiple Neural Networks Facilitating Context Switching and Power Gating. - Yuto Yakubo; Kazuma Furutani; Kouhei Toyotaka; Haruki Katagiri; Masashi Fujita; Munehiro Kozuma; Yoshinori Ando; Yoshiyuki Kurokawa; Toru Nakura; Shunpei Yamazaki (ISSCC, 2023)