High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation. - Yutong Fan; Xi Liu; Ren Huang; Yu Wen; Weihang Zhang; Jincheng Zhang; Zhihong Liu; Shenglei Zhao (Sci. China Inf. Sci., 2023)