A Fully Standard-Cell Based On-Chip BTI and HCI Monitor with 6.2x BTI sensitivity and 3.6x HCI sensitivity at 7 nm Fin-FET Process. - Mitsuhiko Igarashi; Yuuki Uchida; Yoshio Takazawa; Yasumasa Tsukamoto; Koji Shibutani; Koji Nii (A-SSCC, 2018)

Study of impact of BTI's local layout effect including recovery effect on various standard-cells in 10nm FinFET. - Mitsuhiko Igarashi; Yuuki Uchida; Yoshio Takazawa; Yasumasa Tsukamoto; Koji Shibutani; Koji Nii (IRPS, 2018)

Urban Thermal Environment Observation Using Himawari-8/Ahi Data. - Toshiro Sugimura; Yuuki Uchida; Keishi Iwashita (IGARSS, 2019)

Study of Local BTI Variation and its Impact on Logic Circuit and SRAM in 7 nm Fin-FET Process. - Mitsuhiko Igarashi; Yuuki Uchida; Yoshio Takazawa; Makoto Yabuuchi; Yasumasa Tsukamoto; Koji Shibutani (IRPS, 2019)

Estimation of Reinforced Slope Dynamics Using ALOS-2/ PALSAR-2 and Validation by Terrestrial Laser Scanner. - Tomohito Asaka; Takashi Nonaka; Keishi Iwashita; Yuuki Uchida; Toshiro Sugimura (IGARSS, 2020)

An Analysis of Local BTI Variation with Ring-Oscillator in Advanced Processes and Its Impact on Logic Circuit and SRAM. - Mitsuhiko Igarashi; Yuuki Uchida; Yoshio Takazawa; Makoto Yabuuchi; Yasumasa Tsukamoto; Koji Shibutani; Kazutoshi Kobayashi (IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2021)

Leakage Current Fluctuation of On/Off-State Stress in 3 nm Process and its Guard-band Compensation. - Mitsuhiko Igarashi; Yuuki Uchida; Keiichiro Iwamoto; Yoshio Takazawa; Yasumasa Tsukamoto (IRPS, 2025)