Improved uniformity and performance of GAAFETs via full bottom dielectric isolation and quasi-self-aligned landing pads. - Zhongrui Wang; Kun Yang; Jiaxin Yao; Zhanfeng Liu; Hang Zhang; Yuzhe Yu; Jie Xu; Yanyu Yang; Haitao Zhao; Lei Cao; Yadong Zhang; Zhaohao Zhang; et al. (Microelectron. J., 2026)

Enhanced performance and gate-length scaling of gate-all-around devices and circuits with hourglass-shaped channels. - Hang Zhang; Kun Yang; Zhanfeng Liu; Qingkun Li; Zhongrui Wang; Jie Xu; Jiaxin Yao; Fengcheng Wu; Lianlian Li; Zhenhua Wu; Renjie Jiang; Peng Wang; et al. (Microelectron. J., 2026)