ESD characterization of planar InGaAs devices. - Zhigang Ji; Dimitri Linten; Roman Boschke; Geert Hellings; S. H. Chen; AliReza Alian; D. Zhou; Yves Mols; Tsvetan Ivanov; Jacopo Franco; Ben Kaczer; X. Zhang; et al. (IRPS, 2015)

A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies. - Abhitosh Vais; Brent Hsu; Olga Syshchyk; Hao Yu; AliReza Alian; Yves Mols; Komal Vondkar Kodandarama; Bernardette Kunert; Niamh Waldron; Eddy Simoen; Nadine Collaert (IRPS, 2021)

III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance. - Abhitosh Vais; Sachin Yadav 001; Yves Mols; Bjorn Vermeersch; Komal Vondkar Kodandarama; Marina Baryshnikova; G. Mannaert; R. Alcotte; Geert Boccardi; Piet Wambacq; Bertrand Parvais; R. Langer; et al. (ESSDERC, 2022)