Modelling of pseudomorphic AlGaAs/GaInAs/AlGaAs layers using selfconsistent approach. - Jocelyn Alamkan; Henri Happy; Yvon Cordier; Alain Cappy (Eur. Trans. Telecommun., 1990)

Hemt's capability for millimeter wave applications. - S. Bollaert; Yvon Cordier; M. Zaknoune; T. Parenty; Henri Happy; Alain Cappy (Ann. des Télécommunications, 2001)

Reverse current thermal activation of AlGaN/GaN HEMTs on Si(1 1 1). - Abel Fontserè; A. Pérez-Tomás; Marcel Placidi; N. Baron; S. Chenot; Yvon Cordier; J. C. Moreno (Microelectron. Reliab., 2012)

Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs. - Chaymaa Haloui; Gaëtan Toulon; Josiane Tasselli; Yvon Cordier; Éric Frayssinet; Karine Isoird; Frédéric Morancho; Mathieu Gavelle (MIXDES, 2020)

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes. - P. Vigneshwara Raja; Christophe Raynaud; Camille Sonneville; Atse Julien Eric N'Dohi; Hervé Morel; Luong-Viêt Phung; Thi Huong Ngo; Philippe De Mierry; Éric Frayssinet; Hassan Maher; Josiane Tasselli; Karine Isoird; et al. (Microelectron. J., 2022)

Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs. - Gaudencio Paz-Martínez; Ignacio Iñiguez-de-la-Torre; Héctor Sánchez-Martín; José Antonio Novoa-López; Virginie Hoel; Yvon Cordier; Javier Mateos; Tomás González (Sensors, 2022)