Kinetics of hydride disintegration in a 2D Si channel formation by the Si-GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures. - L. K. Orlov; N. L. Ivina; A. V. Potapov; T. N. Smyslova; L. M. Vinogradsky; Z. J. Horvath (Microelectron. J., 2005)