Mathematical Modeling on Computer Simulation. - Yanchun Zhao; Xiaofei Hu; Zefu Zhao (ICCC, 2013)

First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles. - Yu-Rui Chen; Yi-Chun Liu; Zefu Zhao; Wan-Hsuan Hsieh; Jia-Yang Lee; Chien-Te Tu; Bo-Wei Huang; Jer-Fu Wang; Shee-Jier Chueh; Yifan Xing; Guan-Hua Chen; Hung-Chun Chou; et al. (VLSI Technology and Circuits, 2023)

Towards Epitaxial Ferroelectric HZO on n+-Si/Ge Substrates Achieving Record 2Pr = 84 μC/cm² and Endurance > 1E11. - Zefu Zhao; Yu-Rui Chen; Yun-Wen Chen; Wan-Hsuan Hsieh; Jer-Fu Wang; Jia-Yang Lee; Yifan Xing; Guan-Hua Chen; Chee Wee Liu (VLSI Technology and Circuits, 2023)

Engineering HZO by Flat Amorphous TiN with 0.3nm Roughness Achieving Uniform c-Axis Alignment, Record High Breakdown Field ( 10nm HZO), and Record Final 2Pr of 56 μC/cm2 with Endurance > 4E12. - Zefu Zhao; Yu-Rui Chen; Yu-Tsung Liao; Yun-Wen Chen; Wan-Hsuan Hsieh; Jer-Fu Wang; Yu-An Chen; Hao-Yi Lu; Wei-Teng Hsu; Dai-Ying Lee; Ming-Hsiu Lee; C. W. Liu (VLSI Technology and Circuits, 2024)

Engineering Ferroelectric HZO With n+-Si/Ge Substrates Achieving High 2Pr=84 μC/cm2 and Endurance >1E11. - Zefu Zhao; Yun-Wen Chen; Yu-Rui Chen; Chee Wee Liu (IEEE Access, 2024)