InAlN/GaN HEMTs on Si with 0.18-Ω•mm Contact Resistance and 2.1-A/mm Drain Current Density. - Yang Jiang; Fangzhou Du; Zepeng Qiao; Wei-Chih Cheng; Jiaqi He; Xinyi Tang; Feifei Liu; Lei Wen; Qing Wang 066; Hongyu Yu (ASICON, 2021)