Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al2O3 Gate Dielectric. - Zeyang Ren; Qi He; Jiamin Xu; Guansheng Yuan; Jinfeng Zhang; Jincheng Zhang; Kai Su; Yue Hao 001 (IEEE Access, 2020)

Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrOx/Al2O3 Gate Dielectrics. - Kai Su; Zeyang Ren; Yue Peng; Jinfeng Zhang; Jincheng Zhang; Yachao Zhang 002; Qi He; Chunfu Zhang; Yue Hao 001 (IEEE Access, 2020)