Compact Modeling of IGZO-based CAA-FETs with Time-zero-instability and BTI Impact on Device and Capacitor-less DRAM Retention Reliability. - Jingrui Guo; Ying Sun; Lingfei Wang; Xinlv Duan; Kailiang Huang; Zhaogui Wang; Junxiao Feng; Qian Chen; Shijie Huang; Lihua Xu; Di Geng; Guangfan Jiao; et al. (VLSI Technology and Circuits, 2022)

Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (Vth + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application. - Kailiang Huang; Xinlv Duan; Junxiao Feng; Ying Sun; Congyan Lu; Chuanke Chen; Guangfan Jiao; Xinpeng Lin; Jinhai Shao; Shihui Yin; Jiazhen Sheng; Zhaogui Wang; et al. (VLSI Technology and Circuits, 2022)