A Novel Semi-superjunction SiC Trench MOSFET with Ultra-low Specific On-resistance. - Zhaoyu Ai; Haiyun Liu; Xinyang Chen; Jing Feng; Yuxi Zhou; Moufu Kong (ASICON, 2023)

A new concept high-k GaN FinFET with integrated SBD breaking the unipolar limit of GaN and realizing excellent reverse recovery performance. - Moufu Kong; Qizhi Feng; Hongfei Deng; Zhaoyu Ai; Mingliang Yang; Ning Yu; Bingke Zhang; Bo Yi; Hongqiang Yang (Microelectron. J., 2025)