A new full current mode sense amplifier with compensation circuit. - Yiqi Wang; Fazhao Zhao; Mengxin Liu; Zhengsheng Han (ASICON, 2011)

Roles of the gate length and width of the transistors in increasing the single event upset resistance of SRAM cells. - Zhongshan Zheng; Zhentao Li; Gengsheng Chen; Jiajun Luo; Zhengsheng Han (ASICON, 2017)

System Analysis and PHM Methods for Power Devices Based on Physics-of-Failure. - Yulong Zhang; Lulu Wang; Bo Gao; Lixin Wang; Jiajun Luo; Zhengsheng Han (DSA, 2017)

A RC-IGBT with built-in free wheeling diode controlled by MOSFET. - Weizhong Chen; Qiao Guo; Lijun He 006; Zhengsheng Han; Yuchan Wang; Xiaoyun Li (IEICE Electron. Express, 2017)

Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment. - Binhong Li; Yang Huang 002; Jianfei Wu; Yunbo Huang; Bo Li 051; Qingzhu Zhang; Ling Yang; Fayu Wan; Jiajun Luo; Zhengsheng Han; Huaxiang Yin (Microelectron. Reliab., 2018)

Process variation dependence of total ionizing dose effects in bulk nFinFETs. - Bo Li 051; Yunbo Huang; Ling Yang; Qingzhu Zhang; Zhongshan Zheng; Binhong Li; Huiping Zhu; Jianhui Bu; Huaxiang Yin; Jiajun Luo; Zhengsheng Han; Haibin Wang (Microelectron. Reliab., 2018)

Influences of the Source and Drain Resistance of the MOSFETs on the Single Event Upset Hardness of SRAM cells. - Zhongshan Zheng; Zhentao Li; Bo Li 051; Jiajun Luo; Zhengsheng Han (ASICON, 2019)

A Snapback-Free and Low-Loss RC-IGBT With Lateral FWD Integrated in the Terminal Region. - Weizhong Chen; Yao Huang; Shun Li; Yi Huang 011; Zhengsheng Han (IEEE Access, 2019)

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique. - Yangyang Li; Xiaojing Li; Bo Li; Linchun Gao; Weiwei Yan; Fangfang Wang; Duoli Li; Chuanbin Zeng; Jiajun Luo; Zhengsheng Han (IEEE Access, 2019)

A snapback-free RC-LIGBT with separated LDMOS and LIGBT by the L-shaped SiO2 layer. - Weizhong Chen; Yao Huang; Shun Li; Lingli Wang; Lijun He 006; Yi Huang 011; Zhengsheng Han (IEICE Electron. Express, 2019)

A new snapback-free base resistance controlled thyristor with semi-superjunction. - Fei Hu; Limei Song; Zhengsheng Han; Huan Du; Jiajun Luo (IEICE Electron. Express, 2019)

Snapback-free base resistance controlled thyristor with floating N-region. - Fei Hu; Limei Song; Zhengsheng Han; Jiajun Luo (IEICE Electron. Express, 2019)

A snapback-free RC-LIGBT with separated LIGBT and FWD. - Xuwei Lin; Weizhong Chen; Haifeng Qin; Hongsheng Zhang; Zhengsheng Han (IEICE Electron. Express, 2022)

The Effects of $ gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology. - Yuchong Wang; Siyuan Chen; Fanyu Liu; Bo Li 051; Jiangjiang Li; Yang Huang 002; Tiexin Zhang; Xu Zhang; Zhengsheng Han; Tianchun Ye 001; Jing Wan (IRPS, 2023)

Influence of Back Gate Bias on the Hot Carrier Reliability of DSOI nMOSFET. - Xinyi Zhang; Kewei Wang 007; Fang Wang; Jiangjiang Li; Zhicheng Wu; Duoli Li; Bo Li; Jianhui Bu; Zhengsheng Han (IRPS, 2023)

A PUF-Integrated Power Amplifier with Harmonic Tunable Matching Network-Controlled Spectral Regrowth Technique for RF Fingerprinting in IoT. - Zexin Su; Chang Liu; Zhe Chen; Zhiqiang Li; Guangyin Shi; Qian Luo; Jixin Chen; Wang Ling Goh; Zhengsheng Han; Bo Li (A-SSCC, 2024)

SRAM-Based PUF with Noise Immunity Achieving 0.58% Native BER in 55-nm CMOS. - Zexin Su; Bo Li; Chang Liu; Xiaohui Su; Qian Luo; Hongyu Ren; Zhengsheng Han (ISCAS, 2024)

Jiezi: An open-source Python software for simulating quantum transport based on non-equilibrium Green's function formalism. - Junyan Zhu; Jiang Cao; Chen Song; Bo Li; Zhengsheng Han (Comput. Phys. Commun., 2024)

A snapback-free and low-loss reverse conducting LIGBT with integrated multi-functional trench gates. - Ao Wu; Weizhong Chen; Xiangwei Zeng; Cheng Li; Haishi Wang; Zhengsheng Han (IEICE Electron. Express, 2024)

An Effective Method to Compensate for Testing Induced SBFET Degradation by Charging Deep-Level Interface Trap. - Tiexin Zhang; Fanyu Liu; Lei Shu; Siyuan Chen; Yuchong Wang; Yuchen Wu; Jing Wan; Yong Xu; Shi Li 001; Yuyang Ding; Bo Li 051; Zhengsheng Han; et al. (IEEE Access, 2025)

Radiation Dose Detector of γ-Ray Based on Transient Nonequilibrium Body Potential Under Pseudo-MOSFET Configuration. - Tiexin Zhang; Fanyu Liu; Lei Shu; Siyuan Chen; Yuchong Wang; Yuchen Wu; Jing Wan; Yong Xu; Shi Li 001; Yuyang Ding; Bo Li 051; Zhengsheng Han; et al. (IEEE Trans. Instrum. Meas., 2025)