Reverse-Bias Stability and Reliability of Enhancement-mode GaN-based MIS-FET. - Mengyuan Hua; Song Yang; Jin Wei; Zheyang Zheng; Jiabei He; Kevin J. Chen (ASICON, 2019)

Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices. - Yuru Wang; Gang Lyu; Jin Wei; Zheyang Zheng; Jiabei He; Jiacheng Lei; Kevin J. Chen (IEEE Trans. Ind. Electron., 2020)

E-mode p-FET-bridge HEMT: Toward high VTH, low reverse-conduction loss and enhanced stability. - Mengyuan Hua; Junting Chen; Chengcai Wang; Lingling Li; Ling Liu; Zheyang Zheng; Kevin J. Chen (ASICON, 2021)

Short Circuit Capability Characterization and Analysis of p-GaN Gate High-Electron-Mobility Transistors Under Single and Repetitive Tests. - Jiahui Sun; Jin Wei; Zheyang Zheng; Kevin J. Chen (IEEE Trans. Ind. Electron., 2021)

Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs. - Jiahui Sun; Kailun Zhong; Zheyang Zheng; Gang Lyu; Kevin J. Chen (IEEE Trans. Ind. Electron., 2022)

Monolithic Integration of Gate Driver and Protection Modules With P-GaN Gate Power HEMTs. - Han Xu; Gaofei Tang; Jin Wei; Zheyang Zheng; Kevin J. Chen (IEEE Trans. Ind. Electron., 2022)

Characteristics and Evaluation Approaches of Human-Body-Model Electrostatic Discharge Across Schottky p-GaN Gate HEMTs. - Jiahui Sun; Zheyang Zheng; Li Zhang; Kevin J. Chen (IEEE Trans. Ind. Electron., 2024)