Radiation induced transconductance overshoot in the 130 nm partially-depleted SOI MOSFETs. - Chao Peng; Yunfei En; Zhengxuan Zhang; Yuan Liu; Zhifeng Lei (Microelectron. Reliab., 2017)

Degradation mechanisms of AlGaN/GaN HEMTs under 800 MeV Bi ions irradiation. - Zhifeng Lei; H. X. Guo; M. H. Tang; C. Zeng; Zhangang Zhang; H. Chen; Yunfei En; Y. Huang; Yiqiang Chen 002; Chao Peng (Microelectron. Reliab., 2018)

Investigation of Negative Bias Temperature Instability Effect in Partially Depleted SOI pMOSFET. - Chao Peng; Zhifeng Lei; Rui Gao 003; Zhangang Zhang; Yiqiang Chen 002; Yunfei En; Yun Huang (IEEE Access, 2020)

Research on Negative Bias Temperature Instability Effects Under the Coupling of Total Ionizing Dose Irradiation for PDSOI MOSFETs. - Chao Peng; Rui Gao 003; Zhifeng Lei; Zhangang Zhang; Yiqiang Chen 002; Yunfei En; Yun Huang (IEEE Access, 2021)

Comparative Study of Proton and Heavy Ion-induced Damages for GaN-based HEMTs. - Zhipeng Wu; Huixiang Huang; Jianqun Yang; Zhifeng Lei; Xiuhai Cui; Teng Ma; Chao Peng (EITCE, 2024)