High voltage GaN vertical FinFET with a compatible integrated fin diode for low reverse conduction loss. - Zhijia Zhao 005; Yuxi Wei; Tao Sun 017; Kemeng Yang; Jie Wei; Yanjiang Jia; Siyu Deng; Xiaorong Luo; Bo Zhang 027 (Microelectron. J., 2023)

Novel high-voltage GaN CAVET with high threshold voltage and low reverse conduction loss. - Chengtao Luo; Cheng Yang; Zhijia Zhao 005; Xintong Xie; Yuxi Wei; Jie Wei; Jingyu Shen; Jinpeng Qiu; Xiaorong Luo (Microelectron. J., 2024)

Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode. - Xintong Xie; Shuxiang Sun; Zhijia Zhao 005; Pengfei Zhang; Jie Wei; Xin Zhou; Jingyu Shen; Jinpeng Qiu; Xiaorong Luo (Microelectron. J., 2024)

An integrated GaN PNP Bipolar Junction Transistor for ESD applications. - Pengfei Zhang; Zhijia Zhao 005; Gaoqiang Deng; Xiaorong Luo; Shuxiang Sun; Yuxi Wei; Jie Wei (Microelectron. J., 2025)