Filament scaling forming technique and level-verify-write scheme with endurance over 107 cycles in ReRAM. - Akifumi Kawahara; Ken Kawai; Yuuichirou Ikeda; Yoshikazu Katoh; Ryotaro Azuma; Yuhei Yoshimoto; Kouhei Tanabe; Zhiqiang Wei 005; Takeki Ninomiya; Koji Katayama; Ryutaro Yasuhara; Shunsaku Muraoka; et al. (ISSCC, 2013)

Highly-reliable TaOx reram technology using automatic forming circuit. - Ken Kawai; Akifumi Kawahara; Ryutaro Yasuhara; Shunsaku Muraoka; Zhiqiang Wei 005; Ryotaro Azuma; Kouhei Tanabe; Kazuhiko Shimakawa (ICICDT, 2014)

Quantitative method for estimating characteristics of conductive filament in ReRAM. - Zhiqiang Wei 005; Ryutaro Yasuhara; Koji Katayama; Takumi Mikawa; Takeki Ninomiya; Shunsaku Muraoka (ISCAS, 2014)

A new prediction method for ReRAM data retention statistics based on 3D filament structures. - Zhiqiang Wei 005; Koji Katayama; Shunsaku Muraoka; Ryutaro Yasuhara; Takumi Mikawa; Koji Eriguchi (IRPS, 2015)

Highly reliable TaOx ReRAM with centralized filament for 28-nm embedded application. - Yukio Hayakawa; Atsushi Himeno; Ryutaro Yasuhara; W. Boullart; E. Vecchio; T. Vandeweyer; T. Witters; D. Crotti; M. Jurczak; S. Fujii; S. Ito; Y. Kawashima; et al. (VLSIC, 2015)

Theoretical and Experimental Approaches to Select Resistive Switching Material. - Takeki Ninomiya; Zhiqiang Wei 005; Shinichi Yoneda; Kenji Shiraishi (IEICE Trans. Electron., 2015)