Parallel Computing in Memory Paradigm based on Reconfigurable Spin-Orbit Torque. - Zhongkui Zhang; Chao Wang 094; Zhaohao Wang (NANOARCH, 2022)

Layout Aware Optimization Methodology for SOT-MRAM Based on Technically Feasible Top-Pinned Magnetic Tunnel Junction Process. - Chao Wang 094; Zhaohao Wang; Zhongkui Zhang; Jiagao Feng; Youguang Zhang; Weisheng Zhao (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2023)

Process optimization and cryogenic evaluation of spin-orbit torque magnetic random access memory. - Zhongkui Zhang; Xiaofei Fan; Danrong Xiong; Huiyan Sun; Xiantao Shang; Bowen Man; Cong Zhang; Shuhui Li; Renjie Su; Chengyuan Sun; Jennifer Zhou; Hongxi Liu; et al. (IMW, 2024)

Area and Energy Efficient Short-Circuit-Logic-Based STT-MRAM Crossbar Array for Binary Neural Networks. - Chao Wang 094; Zhaohao Wang; Zhongkui Zhang; Youguang Zhang; Weisheng Zhao (IEEE Trans. Circuits Syst. II Express Briefs, 2024)

Variation Aware Evaluation Approach and Design Methodology for SOT-MRAM. - Chao Wang 094; Zhaohao Wang; Shixing Li; Zhongkui Zhang; Youguang Zhang (IEEE Trans. Circuits Syst. I Regul. Pap., 2024)

Technically Feasible Robust Complementary SOT-MRAM Design for Improving the Area and Energy Efficiency. - Chao Wang 094; Zhongkui Zhang; Xiaoyang Xu; Xianzeng Guo; Qihang Gao; Zhaohao Wang; Weisheng Zhao (IEEE Trans. Circuits Syst. I Regul. Pap., 2025)