Improved uniformity and performance of GAAFETs via full bottom dielectric isolation and quasi-self-aligned landing pads. - Zhongrui Wang; Kun Yang; Jiaxin Yao; Zhanfeng Liu; Hang Zhang; Yuzhe Yu; Jie Xu; Yanyu Yang; Haitao Zhao; Lei Cao; Yadong Zhang; Zhaohao Zhang; et al. (Microelectron. J., 2026)