Unfolded/tightened mechanism series support design based on characteristics of flying snake spine. - Zuhui Jiang; Baolin Feng; Shibiao Zhao; Zhongshan Zheng; Lu Li; Kexuan Li (ROBIO, 2014)

Roles of the gate length and width of the transistors in increasing the single event upset resistance of SRAM cells. - Zhongshan Zheng; Zhentao Li; Gengsheng Chen; Jiajun Luo; Zhengsheng Han (ASICON, 2017)

Process variation dependence of total ionizing dose effects in bulk nFinFETs. - Bo Li 051; Yunbo Huang; Ling Yang; Qingzhu Zhang; Zhongshan Zheng; Binhong Li; Huiping Zhu; Jianhui Bu; Huaxiang Yin; Jiajun Luo; Zhengsheng Han; Haibin Wang (Microelectron. Reliab., 2018)

Influences of the Source and Drain Resistance of the MOSFETs on the Single Event Upset Hardness of SRAM cells. - Zhongshan Zheng; Zhentao Li; Bo Li 051; Jiajun Luo; Zhengsheng Han (ASICON, 2019)

Analyzing the synergistic effect of ionization and displacement damage in carbon nanotube field-effect transistors using protons irradiation. - Yichen Li; Peng Lu; Zhongshan Zheng; Dong Zhang; Can Yang; Xiaojing Li; Yichao Sun; Bo Li (IEICE Electron. Express, 2025)