A Charge-Based Analytical Model for Accurate Switching Transient Description of Half-Bridge GaN HEMTs. - Xiao Li; Zhuofan Xiong; Yushan Liu (IECON, 2023)

Nonsegmented Turn-On Switching Transient Analytical Model for Fast-Switching GaN HEMT With Datasheet-Driven Unified I-V Characterization. - Xiao Li 004; Zhuofan Xiong; Yushan Liu 001 (IEEE Trans. Ind. Electron., 2025)