Self-clamped P-shield 4H-SiC trench MOSFET for low turn-off loss and suppress switching oscillation. - Lijuan Wu; Guanglin Yang; Deqiang Yang; Zigui Tu; Jie Yuan; Dongsheng Zhao; Mengjiao Liu; Jiahui Liang (Microelectron. J., 2024)

A novel 4H-SiC IGBT with double gate PMOS for improving the switch controllability and FBSOA. - Lijuan Wu; Deqiang Yang; Guanglin Yang; Dongsheng Zhao; Jie Yuan; Zigui Tu; Mengjiao Liu (Microelectron. J., 2024)