Ge-doped In2O3: First Demonstration of Utlizing Ge as Oxygen Vacancy Consumer to Break the Mobility/Reliability Tradeoff for High Performance Oxide TFTs. - Jiayi Wang; Ziheng Bai; Kuo Zhang; Zhicheng Wu; Di Geng; Yang Xu; Nannan You; Yuxuan Li; Guanhua Yang; Ling Li 013; Shengkai Wang; Ming Liu 022 (VLSI Technology and Circuits, 2024)