Signatures of Positive Gate Over-Drive Induced Hole Trap Generation and its Impact on p-GaN Gate Stack Instability in AlGaN/GaN HEMTs. - Rasik Rashid Malik; Vipin Joshi; Rajarshi Roy Chaudhuri; Mehak Ashraf Mir; Zubear Khan; Avinas N. Shaji; Madhura Bhattacharya; Anup T. Vitthal; Mayank Shrivastava (IRPS, 2023)

On The Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs. - Mehak Ashraf Mir; Anup Thakare; Mohammad Ateeb Munshi; V. Avinash; Saniya S. Wani; Zubear Khan; Rajarshi Roy Chaudhuri; Simran R. Karthik; Rasik Rashid Malik; Vipin Joshi; Mayank Shrivastava (IRPS, 2024)