Faouzi Nasri

According to our database, Faouzi Nasri authored at least 4 papers between 2015 and 2025.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2025

Impact of Electrothermal Effects on Electron and Phonon Dynamics GAAFET Transistor.

Zina Guesmi, Faouzi Nasri, Sayed Missaoui

Proceedings of the 22nd IEEE International Multi-Conference on Systems, Signals & Devices, 2025

Temperature Effects on Electrical Characteristics of 20 nm Finfet Transistor.

Haifa Bahri, Faouzi Nasri, Nejeh Jaba

Proceedings of the 22nd IEEE International Multi-Conference on Systems, Signals & Devices, 2025

2023

Numerical Elucidation of the Electrothermal Characteristics of Gate-All-Around FET Devices.

Faouzi Nasri, Husien Salama

Proceedings of the 11th IEEE International Conference on Systems and Control, 2023

2015

Effect of second-order temperature jump in Metal-Oxide-Semiconductor Field Effect Transistor with Dual-Phase-Lag model.

Faouzi Nasri, M. F. Ben Aissa, Hafedh Belmabrouk

Microelectron. J., 2015