Ivana Kovacevic-Badstuebner

According to our database, Ivana Kovacevic-Badstuebner authored at least 6 papers between 2017 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of six.

2025

On How to Implement Experimentally Obtained Defect Characteristics in SiC Device Simulation.

H. G. Medeiros, A. K. Brandl, P. Kumar, H. Scriba, S. Vuillemin, S. Race, Ivana Kovacevic-Badstübner, M. E. Bathen, U. Grossner

Proceedings of the IEEE International Reliability Physics Symposium, 2025

2024

Exploring the border traps near the SiO2-SiC interface using conductance measurements.

P. Kumar, M. Krummenacher, H. G. Medeiros, S. Race, P. Natzke, Ivana Kovacevic-Badstübner, M. E. Bathen, U. Grossner

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Extended Analysis of Power Cycling Behavior of TO-Packaged SiC Power MOSFETs.

Ivana Kovacevic-Badstuebner, Salvatore Race, Ulrike Grossner, Elena Mengotti, Christoph Kenel, Enea Bianda, Joni P. A. Jormanainen

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Power Cycling Reliability of SiC MOSFETs in Discrete and Module Packages.

Ivana Kovacevic-Badstuebner, Salvatore Race, Thomas Ziemann, Shweta Tiwari, Ulrike Grossner, Elena Mengotti, Enea Bianda, Joni P. A. Jormanainen

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Accuracy of Thermal Analysis for SiC Power Devices.

Salvatore Race, Thomas Ziemann, Shweta Tiwari, Ivana Kovacevic-Badstuebner, Ulrike Grossner

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2017

Trade-off analysis of the p-base doping on ruggedness of SiC MOSFETs.

Bhagyalakshmi Kakarla, Selamnesh Nida, Johanna Mueting, Thomas Ziemann, Ivana Kovacevic-Badstuebner, Ulrike Grossner

Microelectron. Reliab., 2017