Saifei Dai

According to our database1, Saifei Dai authored at least 2 papers between 2024 and 2025.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

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Links

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Bibliography

2025
Improved Memory Window and Retention of Silicon Channel Hf0.5Zr0.5O2 FeFET by Using SiO2/HfO2/SiO2 Gate Side Interlayer.
Proceedings of the IEEE International Reliability Physics Symposium, 2025

2024
Role of Nitrogen in Suppressing Interfacial States Generation and Improving Endurance in Ferroelectric Field Effect Transistors.
Proceedings of the IEEE International Memory Workshop, 2024


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