Tingwei Gong

Orcid: 0009-0005-4573-2648

According to our database1, Tingwei Gong authored at least 11 papers between 2023 and 2025.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2025
Design an ultra-wideband extended continuous inverse Class-GF power amplifiers with source-harmonic-controlled based on rectangular ring-resonant microstrip impedance matching circuit.
Microelectron. J., 2025

A broadband high gain driver amplifier with gain compensation for current-reuse.
Microelectron. J., 2025

Design of a Doherty power amplifier based on extended continuous class-GF mode for broadband applications.
Int. J. Circuit Theory Appl., 2025

A Switchable Linear Regulator Implemented in GaAs pHEMT for WiFi Application.
Int. J. Circuit Theory Appl., 2025

2024
Investigation and Design of Ultra-Wideband Resistive-Reactive Series of Continuous Inverse Modes Power Amplifier With Input Second-Harmonic Manipulation.
IEEE Trans. Circuits Syst. I Regul. Pap., December, 2024

Design a Multi-Octave High-Efficiency Power Amplifier Using a Symmetrical Ring-Resonator Filtering Network With a Dual-Ring Embedded Architecture.
IEEE Trans. Circuits Syst. II Express Briefs, September, 2024

A broadband low-loss SPDT RF switch using a new off-chip compensation technology.
Int. J. Circuit Theory Appl., August, 2024

S-C band wideband GaN power amplifier MMIC for radar application.
IEICE Electron. Express, 2024

2023
Design of an Ultra-Wideband High-Efficiency Power Amplifier Based on a Novel Impedance Matching Structure With Three Paths.
IEEE Trans. Circuits Syst. II Express Briefs, November, 2023

Design of a high-efficiency bandwidth-enhanced power amplifier based on dual-paths impedance matching techniques.
Int. J. Circuit Theory Appl., September, 2023

Design of a highly efficient 0.6-4.5GHz multioctave bandwidth GaN-HEMT power amplifier.
IEICE Electron. Express, 2023


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