Walid Filali

According to our database, Walid Filali authored at least 6 papers between 2018 and 2025.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of six.

2025

Fully Transparent and Self-Powered Planar Photodetector Based on $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ Thin Film.

Walid Filali, Elyes Garoudja, Fouaz Lekoui, Laid Henni, Rachid Amrani, Slimane Oussalah

Proceedings of the 22nd IEEE International Multi-Conference on Systems, Signals & Devices, 2025

2023

Modeling of p+/n-well and n+/p-well Diodes Based on 1μm CMOS Technology Using GWO Algorithm.

Mohammed Mekheldi, Walid Filali, Elyes Garoudja, Slimane Oussalah

Proceedings of the 20th International Multi-Conference on Systems, Signals & Devices, 2023

Fabrication and characterization of Ti/TiN- based resistance temperature detector.

Walid Filali, Hadjira Haridi, Elyes Garoudja, Mohamed Boubaaya, Abdelkrim El Hadi Khediri, Mohamed Mekheldi, Laid Henni, Fouaz Lekoui, Rouabeh Hamza, Rachid Amrani, Slimane Oussalah

Proceedings of the 20th International Multi-Conference on Systems, Signals & Devices, 2023

2022

Analysis of I-V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy.

Slimane Oussalah, Walid Filali, Elyes Garoudja, Boumediene Zatout, Fouaz Lekoui, Rachid Amrani, Noureddine Sengouga, Mohamed Henini

Microelectron. J., 2022

Fabrication and characterization of ZnO/Al2O3 thin film transistors: channel length effect study.

Walid Filali, Fouaz Lekoui, Boumediene Zatout, Laid Henni, Sidali Abdelmoumene, Elyes Garoudja, Rachid Amrani, Slimane Oussalah

Proceedings of the 19th International Multi-Conference on Systems, Signals & Devices, 2022

2018

Simulation of p-type Schottky Diode Based on Al0.29Ga0.71As with Titanium/Gold Schottky Contact.

Walid Filali, Slimane Oussalah, Noureddine Sengouga, Mohamed Henini, David Taylor

Proceedings of the 30th International Conference on Microelectronics, 2018