A. A. Quivy

According to our database, A. A. Quivy authored at least 9 papers between 2003 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Detection of Water Contaminants by Organic Transistors as Gas Sensors in a Bottom-Gate/Bottom-Contact Cross-Linked Structure.

José Enrique Eirez Izquierdo, Marco Roberto Cavallari, Dennis Cabrera García, José Diogo da Silva Oliveira, Vinicius Augusto Machado Nogueira, Guilherme de Souza Braga, Oswaldo Hideo Ando Junior, Alain A. Quivy, Ioannis Kymissis, Fernando Josepetti Fonseca

Sensors, September, 2023

2005

Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning.

S. L. Morelhão, L. H. Avanci, R. Freitas, A. A. Quivy

Microelectron. J., 2005

Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3mum.

A. F. G. Monte, J. F. R. Cunha, M. A. P. Soler, S. W. Silva, A. A. Quivy, Paulo César de Morais

Microelectron. J., 2005

2003

Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3mum.

M. J. da Silva, Sandro Martini, T. E. Lamas, A. A. Quivy, E. C. F. da Silva, J. R. Leite

Microelectron. J., 2003

Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well.

C. S. Sergio, Guennadii Michailovich Gusev, A. A. Quivy, T. E. Lamas, J. R. Leite, O. Estibals, J. C. Portal

Microelectron. J., 2003

Coupled rate equation modeling of self-assembled quantum dot photoluminescence.

F. V. de Sales, Júnio Márcio Rosa Cruz, Sebastião William da Silva, M. A. G. Soler, Paulo César de Morais, M. J. da Silva, A. A. Quivy, J. R. Leite

Microelectron. J., 2003

H-band emission in single heterojunctions.

Fanyao Qu, Antônio Tadeu Lino, N. O. Dantas, Paulo César de Morais, E. C. F. da Silva, A. A. Quivy, J. R. Leite

Microelectron. J., 2003

Hybrid and effective satellites for studying superlattices.

S. L. Morelhão, A. A. Quivy, J. Härtwig

Microelectron. J., 2003

Morphological and optical properties of p-type GaAs(001) layers doped with silicon.

T. E. Lamas, Sandro Martini, M. J. da Silva, A. A. Quivy, J. R. Leite

Microelectron. J., 2003