Arthur Gossard

According to our database1, Arthur Gossard authored at least 11 papers between 2014 and 2020.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Awards

IEEE Fellow

IEEE Fellow 2001, "For contributions to semiconductor microstructure fabrication.".

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

On csauthors.net:

Bibliography

2020
High Efficiency, High Gain and High Saturation Output Power Quantum Dot SOAs Grown on Si and Applications.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2020

2019
High performance lasers on Si.
Proceedings of the 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC), 2019

Terabit Interconnects with a 20-GHz O-Band Passively Mode Locked Quantum Dot Laser Grown Directly on Silicon.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2019

A Low-Noise High-Channel-Count 20 GHz Passively Mode Locked Quantum Dot Laser Grown on Si.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2019

Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrate.
Proceedings of the Device Research Conference, 2019

2018
Low Threshold Current 1.3 μm Fabry-Perot III-V Quantum Dot Lasers on (001) Si with Superior Reliability.
Proceedings of the Optical Fiber Communications Conference and Exposition, 2018

NRZ and PAM-4 Direct Modulation of 1.3µm Quantum Dot Lasers Grown Directly on On-Axis (001) Si.
Proceedings of the European Conference on Optical Communication, 2018

9 GHz passively mode locked quantum dot lasers directly grown on Si.
Proceedings of the 76th Device Research Conference, 2018

2017
Quantum dot lasers grown on (001) Si substrate for integration with amorphous Si waveguides.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2017

2014
High performance 1.3µm InAs quantum dot lasers epitaxially grown on silicon.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2014

A path to 300 mm hybrid silicon photonic integrated circuits.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2014


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