Benjamin S. Williams

Orcid: 0000-0003-3274-5317

Affiliations:
  • Massachusetts Institute of Technology, Cambridge, MA, USA (PhD 2003)


According to our database1, Benjamin S. Williams authored at least 4 papers between 2003 and 2023.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
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Links

On csauthors.net:

Bibliography

2023
A 0.4-4 THz p-i-n Diode Frequency Multiplier in 90-nm SiGe BiCMOS.
IEEE J. Solid State Circuits, September, 2023

2022
Broadband 0.4-4 THz Generation in 90nm SiGe BiCMOS.
Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

2020
Patterns of Reliability: Assessing the Reproducibility and Integrity of DNA Methylation Measurement.
Patterns, 2020

2003
Terahertz QCLs.
PhD thesis, 2003


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