Bor-Ren Fang

According to our database1, Bor-Ren Fang authored at least 1 paper in 2010.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

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Links

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Bibliography

2010
Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs.
Microelectron. Reliab., 2010


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