Dongxun Li

According to our database, Dongxun Li authored at least 2 papers between 2020 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

Effects of 5 MeV proton irradiation on 4H-SiC lateral pMOSFETs on-state characteristics.

Ying Wang, Yanjing He, Xiaoyan Tang, Qingwen Song, Dongxun Li, Hao Yuan, Xiaowu Gong, Yuming Zhang

Microelectron. J., 2023

2020

Effects of 5 MeV Proton Irradiation on 1200 V 4H-SiC VDMOSFETs ON-State Characteristics.

Dongxun Li, Yuming Zhang, XiaoYan Tang, Yanjing He, Qingwen Song, Yimen Zhang

IEEE Access, 2020