Fu-Chang Hsu

According to our database, Fu-Chang Hsu authored at least 2 papers between 2024 and 2026.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2026

Design and Simulation of Long-Retention Capacitorless 1T-DRAM Using Experimentally Calibrated Process and Device Simulations.

Shao-Han Cheng, Chun-Hung Wang, Fu-Chang Hsu, Yao-Jen Lee, Yiming Li

Proceedings of the 27th International Symposium on Quality Electronic Design, 2026

2024

3D X-DRAM: A Novel 3D NAND-like DRAM Cell and TCAD Simulations.

Fu-Chang Hsu, Richard J. Huang, Re-Peng Tsay, Jui-Hsin Chang, Chia-Haur Chang, I-Wei Huang, Kevin Hsu

Proceedings of the IEEE International Memory Workshop, 2024